It is important not only to study EUV pellicle to protect EUV mask from contaminants generated during the process, but also to control contaminants by directly cleaning the contaminated EUV mask before exposure of the scanner. The cleaning techniques widely used in the existing semiconductor processes cause various problems such as the roughness variation of the surface of the mask, the decrease in reflectivity, and the contamination of organic substances in cleaning EUV masks. The cleaning processes to overcome those problems need to be developed.
EUV IUCC provides emulated samples with fine particle contaminants for evaluation of novel cleaning processes on the EUV mask surface.

• Fabrication of samples with fine particles and characterization of defects on the surface
• EUV mask/pellicle surface dry/wet cleaning process evaluation
• Calculation of cleaning process efficiency and identification of cleaning mechanism